Russell Hollingsworth, Ph.D.,
Manager, Optics

Dr. Hollingsworth joined ITN as a Senior Scientist in May 2000, following ITN’s acquisition of the research portion of Materials Research Group (MRG). Dr. Hollingsworth was a co-founder of MRG, and Manager of R&D from the inception of the company in 1991. Dr. Hollingsworth has 20 years experience in process development of amorphous silicon, alloy-based materials, and devices grown by Plasma Enhanced Chemical Vapor Deposition (PECVD). Dr. Hollingsworth’s accomplishments include one of the first reports of amorphous solar cells using silicon carbide as the absorber, the first a-silicon pin diode high energy particle detector capable of direct detection of minimum ionizing electrons, and the development of a-silicon as a vacuum photoresist. He led the development of thin film materials for microbolometer infrared cameras, resulting in an uncooled LWIR camera with 30mK NETD. This Army Phase II effort was nominated for a 2005 DOD SBIR Quality Award. Dr. Hollingsworth has extensive experience in all phases of thin-film photovoltaic manufacturing from equipment design, construction, and control software, to process development and device characterization. Dr. Hollingsworth has over 40 publications, and 1 patent on semiconductor devices and materials. Dr. Hollingsworth holds a BS-Physics from Louisiana State University, and both a MS and Ph.D. in Physics from Colorado State University.